GlobalFoundries and Navitas Semiconductor have announced a long-term strategic partnership to strengthen and accelerate U.S.-based gallium nitride (GaN) technology and manufacturing.
The partnership aims to expand U.S. capacity for advanced GaN technology, design, and at-scale manufacturing for critical power applications.
The collaboration will focus on delivering advanced solutions for high-power markets like AI datacenters, performance computing, energy infrastructure, and industrial electrification.
Strategic Partnership for GaN Technology
GlobalFoundries and Navitas Semiconductor are collaborating to enhance U.S.-based GaN technology and manufacturing capabilities.
Focus on High-Power Markets
The partnership targets critical applications in AI datacenters, performance computing, energy infrastructure, and industrial electrification.
Production Beginning in 2026
Development at GF's Burlington facility is scheduled for early 2026, with production expected to start later in the year.
Ensuring U.S. Semiconductor Leadership
The collaboration aims to provide secure and scalable GaN solutions to support national security and competitiveness.
Advancing GaN Adoption
Navitas Semiconductor's expertise in GaN technology complements GF's manufacturing capabilities to accelerate GaN adoption in high-power markets.
- The partnership between GlobalFoundries and Navitas Semiconductor will enable customers to access the most advanced GaN solutions for critical power applications.
- By combining GF's manufacturing expertise with Navitas' innovation in GaN technology, the partnership aims to drive decarbonization and energy sustainability in next-generation energy platforms.
The strategic partnership between GlobalFoundries and Navitas Semiconductor represents a significant step forward for U.S. semiconductor leadership in GaN technology. It will support national competitiveness, energy sustainability, and critical applications in high power markets.